A Schottky diode is a diode formed by the junction of a semiconductor with a metal. A Schottky diode has a lower forward voltage drop and faster switching speed than a standard silicon diode.
A Schottky diode typically has a lower forward voltage drop and faster switching speed than a standard silicon diode. A disadvantage is that they usually have a higher leakage current than conventional diodes.
Several forms of transistors such as MESFETs also use the Schottky barrier effect to increase switching speed, while others include a Schottky diode as a form of clamping.