IRFP250N vs IRF3415
I'm making a boost converter which converts 12 V to 100 V maximum. The maximum input current is 15 A. Power of the converter is 120 W. I will drive the MOSFET with a TC4429.
At first I chose the IRFP250N because it has low parasitic capacitances and shorter turn on/off times, but it has a higher RDS(on) (0.075 Ω) compared to the IRF3415 (0.042 Ω.) This difference creates a big power dissipation difference at higher currents. Also, the IRF3415 will cause more ringing when switching.
I'm unsure of which MOSFET would give me better efficiency. I am planning to add a R = 6.8 Ω, C = 470 pF snubber across the MOSFET which may decrease efficiency even more. Do I really need a snubber?
What should I look for in a MOSFET? Which MOSFET is better for my application, the IRF3415 or the IRFP250N?
My calculations (f = 100 kHz, P = 120 W):
tdon = 12*10^-9;
tr = 55*10^-9;
tdoff = 71*10^-9;
tf = 69*10^-9;
Rds_on = 0.042;
Loss_conduction = Iimax^2 * Rds_on
Loss_turnon = P/6 * tr * f
Loss_turnoff = P/6 * tf * f
TotalLoss = Loss_conduction + Loss_turnon + Loss_turnoff