BF is the parameter used to describe the maximum beta of the device. Effective beta changes based on current - at low currents, base-emitter leakage and non-ideal B-E junction effects reduce the effective beta; at high currents, other non-ideal effects (high level injection) also reduce effective beta.
While beta is useful
To broadly describe BJT performance, it is not a fundamental parameter of the device.
Beta is not used directly in a transistor to make IC=beta*IB; rather IB is calculated from B-E characteristics (area, injection efficiency and recombination); then IC is calculated from similar parameters. The result (IC/IB) can be characterized as 'beta', but it is not the primary variable.