i am designing this push and pull driver for external NMOS in my buck topology circuit.
i am well aware the gate charge ( based on Cgd) i need to turn FET ON and OFF at room temperature based on datasheet. But i do not know how much charge i need at 125 C in the design ?
all the spice models i have works only at room temp.
Gate Charge Q_GD = Slew Current x Rise Time or there are many other formulas. also data sheet shows how much minimum charge i need to turn on the FET
but my question is should i worried about gate charge at 125 C ? will it increases ? how to find it from datasheet?
AT hot RDS ON of the FET is increases , bigger RDSON more static power dissipation..but since i am switching the FET at 300 KHZ I am more interested in switching power dissipation.
My thinking is VGS of the FET will be hanging at 125 C so i think gate charge shold increases too.. how much that will be ?