How do we calculate effective resistance of a NMOS, operating in linear region across drain and source?
Asked
Active
Viewed 842 times
2
-
1I recall the formula Re = 1/GM with GM = K * W/L * Ve, where K = MU*Cox, and Ve = Vgs - Vt; this was long channel physics mode; – analogsystemsrf Jul 03 '19 at 01:34
1 Answers
1
answer
\$1/R_{ds}=g_m=\Delta I_{ds}/ \Delta V_{ds}\$ @ Vgs
While RdsOn is often rated in data sheets for ~ 2.5 to 3 x Vgs(th) aka Vt the threshold conduction at some std current like Ids=xxx uA with Vgs=Vds.
Thus gm reduces as Vgs reduces towards Vt yet if Load , Rd >> Rds then Vds is near 0. So maximum voltage gain is when Rd is near Rds which changes with Vgs and you know that for AC V gain = -Vds/Vgs= -gm*Rd.
Y Question
What is Vgs where the maximum small signal voltage gain is maximum?

Tony Stewart EE75
- 1
- 3
- 54
- 182