3

After 40+ years you would think I would know this, somehow it never came up, but for the life of me I don't see it.

Typical transistors specs list a plethora of values but one that always seems to be missing is \$I_{b_{MAX}}\$. That is, the maximum current you can pass through the base emitter junction.

Obviously you can't exceed the power rating across the base-emitter diode forward drop, so 626mW/0.7V ~ 900mA, but I have a feeling there is a fusing number for the bonding wire. Perhaps it is the same as the max collector current.. 200mA.

What number is the right one, if any?

Trevor_G
  • 46,364
  • 8
  • 68
  • 151

2 Answers2

1

Aside from the answers here the NXP BC847 lists a maximum Ibm as 100mA for a <= 1ms pulse.

enter image description here

It is less than the maximum collector current under the same conditions.

Spehro Pefhany
  • 376,485
  • 21
  • 320
  • 842
  • Yup seen those, but no indication of continuous. I was toying with an idea to use the BE as a diode in a current detection circuit for a [different question](https://electronics.stackexchange.com/questions/353458/distributing-an-electrical-current) , but the current gets a tad large. – Trevor_G Feb 01 '18 at 20:34
  • Maybe 50% if Ic is a good ball-park number in general though. – Trevor_G Feb 01 '18 at 20:36
  • 1
    @Trevor_G Depends on how brave you are. 10mA is mentioned in the testing of Vbe. – Spehro Pefhany Feb 01 '18 at 20:44
1

The assembly house will use the same size bond wire for all 3 leads. Unless the base metallization from bond-pad into the base region has narrow metal, I'd use the same # as emitter or collector. Some old datasheets would, with pride, show die photos.

analogsystemsrf
  • 33,703
  • 2
  • 18
  • 46