The common base configuration has been well documented for the BJT. Small signal analysis shows better high frequency capability than a common emitter for the same transistor. I have seen common gate used on JFETs at VHF where the low input impedance would be a better match to 50 ohm.
Would a common gate circuit arrangement which would be more complex on an orthodox SMPS give lower switching losses? Is there a definitive statement about how much lower they would be? I did this on a small ZVs royer where the circuit complexity penalty for common gate was minimal but the actual switching losses of ZVs are so low anyway when input volts are high and input currents are low. Is it worthwhile to look at common gate?