Suppose that I know how an NPN transistor works.
How different is a PNP transistor? What are the operational differences between a PNP and a NPN?
Suppose that I know how an NPN transistor works.
How different is a PNP transistor? What are the operational differences between a PNP and a NPN?
PNP transistors work the same way as NPNs do but all voltages and currents are reversed. You connect the emitter to the higher potential, source current from the base and the main current flows into the emitter and then exits through the collector.
\$V_\rm{BE}\$ will be \$-0.7\,\rm{V}\$ but it's magnitude should be the same in both PNP and NPN if you use complementary parts.
NPN and PNP transistors are different. Electrons are more mobile than Holes Which means that PNP is not as good as NPN. For Si BJTs the PNP types are behind when it comes to breakdown voltage and really high power. For general purpose devices like BC337 / BC327 things for all intent and purpose are the same but if you wanted to do a off line SMPS it wouldnt be easy or practical at 1KW. For germanium the NPN is supposed to be better but it is not. This is due to manufacturing issues. The AC127 is not nearly as good as the AC128 and the AD161 is not as good as the AD162 and yes these devices were sold as matched pairs. The ratio of electron to hole mobility is a determining factor in how close the PNP will be to the NPN. This is much worse for SiC so one would expect lousey PNP BJTs so they probably wont bother making them. For some reason PNPs have lower noise so they are favoured in diff pair input stages. The abundance of highside driver chips is proof that PNP is not as good as NPN.
The only difference lies within the functionality of the transistors. In grounded (common) emitter configuration, when a base current is provided (or to be more practical-when base is connected to 5v supply) of a PNP transistor, no conduction takes place as the majority carriers in n region are electrons whose motion is suppressed and no path is formed b/w emitter and collector.Thus no o/p is obtained at the emitter junction. If base current is removed from the transistor a virtual path is formed b/w the emitter and collector which offers certain resistance to electron flow which is subsequently altered by the base current (or voltage). If in such case, the Vcc is directly connected to the collector and emitter is grounded through a resistance(possibly 10k), then Vcc gets a direct path to appear at the emitter junction. Thus if o/p is taken at emitter in case of PNP, the config is that of an inverter while at collector the transistor works as a simple switch or buffer.(This is exactly the opposite of NPN config.) Due to dearth of certain simulation software, i am unable to present a pictorial view. But i hope this would serve the purpose.